Details
ON Semiconductor ULN2003ADR2G High Voltage, High Current Darlington Transistor Arrays
The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA permit them to drive incandescent lamps.
Features
- These are Pb-Free Devices
Zusatzinformation
| Hersteller | ON Semiconductor |
|---|---|
| Herstellerteilenummer | ULN2003ADR2G |
| Datenblatt | Download |
| Kollector-Emitter Spannug | 50V |
| Kollector-Strom Max. | 500mA |
| Kollektor-Emitter-Sättigungsspannung max. | 1.6V |
| Transistor-Typ | NPN |
| Anzahl der Pins | 16 |
| Betriebstemp. | -20°C - +85°C |
| Date Code | 1721 |
| RoHS | RoHS-Konform |
| Qualifizierung | - |
| Gehäuse | SOIC-16 |
| Baureihe | - |
| Montagetyp | SMD |
| Verpackung | Keine Angabe |
| Lieferzeit | Am nächsten Arbeitstag |