Details
The FM25V02 is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. A erroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.
Features
- 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention (See the Data Retention and Endurance table)
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
- Very fast serial peripheral interface (SPI)
- Up to 40-MHz frequency
- Direct hardware replacement for serial flash and EEPROM
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
- Sophisticated write protection scheme
- Hardware protection using the Write Protect (WP) pin
- Software protection using Write Disable instruction
- Software block protection for 1/4, 1/2, or entire array
- Device ID
- Manufacturer ID and Product ID
- Low power consumption
- 220 μA active current at 1 MHz
- 90 μA (typ) standby current
- 5 μA sleep mode current
- Low-voltage operation: VDD = 2.0 V to 3.6 V
- Industrial temperature: –40 °C to +85 °C
- Packages
- 8-pin small outline integrated circuit (SOIC) package
- 8-pin thin dual flat no leads (DFN) package
- Restriction of hazardous substances (RoHS) compliant
Zusatzinformation
Hersteller | Cypress |
---|---|
Herstellerteilenummer | FM25V02-G |
Datenblatt | Download |
Betriebsspannung | 2V - 3.6V |
Speicher Grpöße | 256Kbit |
Adressbus | - |
Datenbus | - |
Betriebstemp. | -40°C - +85°C |
Anzahl der Pins | 8 |
Gehäuse | SOIC-8 |
Montagetyp | SMD |
Date Code | 1648 |
RoHS | RoHS-Konform |
Qualifizierung | - |
Lieferzeit | Am nächsten Arbeitstag |