The FM25V02 is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. A  erroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

Features

• 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8
• High-endurance 100 trillion (1014) read/writes
• 151-year data retention (See the Data Retention and Endurance table)
• NoDelay™ writes
• Advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI)
• Up to 40-MHz frequency
• Direct hardware replacement for serial flash and EEPROM
• Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme
• Hardware protection using the Write Protect (WP) pin
• Software protection using Write Disable instruction
• Software block protection for 1/4, 1/2, or entire array
• Device ID
• Manufacturer ID and Product ID
• Low power consumption
• 220 μA active current at 1 MHz
• 90 μA (typ) standby current
• 5 μA sleep mode current
• Low-voltage operation: VDD = 2.0 V to 3.6 V
• Industrial temperature: –40 °C to +85 °C
• Packages
• 8-pin small outline integrated circuit (SOIC) package
• 8-pin thin dual flat no leads (DFN) package
• Restriction of hazardous substances (RoHS) compliant