Details
This 63mΩ;, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
Features
- Low On Resistance
- Ultra-Low Qg and Qgd
- High Operating Drain Current
- Ultra-Small Footprint
- 0.73 mm × 0.64 mm
- Low Profile
- 0.35-mm Max Height
- Integrated ESD Protection Diode
- Rated > 3-kV HBM
- Rated > 2-kV CDM
- Lead and Halogen Free
- RoHS Compliant
Zusatzinformation
| Hersteller | Texas Instruments |
|---|---|
| Herstellerteilenummer | CSD13380F3 |
| Datenblatt | Download |
| Drain-Source-Voltage (Vds) | 12 V |
| Drain Current | 3.6A |
| Drain-Source Widerstand (on) | 63 mΩ |
| Verlustleistung (pd) | 1.4 W |
| Anzahl der Pins | 3 |
| Betriebstemp. | -55°C - +150°C |
| Date Code | - |
| RoHS | RoHS-Konform |
| Qualifizierung | - |
| Gehäuse | PICOSTAR |
| Baureihe | FemtoFET |
| Montagetyp | SMD |
| Verpackung | Cut-Tape / Tape on Reel |
| Lieferzeit | Am nächsten Arbeitstag |